The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Nov. 21, 2013
Applicant:
Lx Semicon Co., Ltd., Daejeon, KR;
Inventors:
Assignee:
LX Semicon Co., Ltd., Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 33/34 (2010.01); H01L 33/32 (2010.01); H01L 29/32 (2006.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02521 (2013.01); H01L 21/02529 (2013.01); H01L 29/0619 (2013.01); H01L 29/0873 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01); H01L 33/025 (2013.01); H01L 33/34 (2013.01); H01L 29/32 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01);
Abstract
An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cmor less.