The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Sep. 08, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Katsumi Satoh, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Each of a plurality of IGBT cells includes an n base layer formed in a semiconductor layer, a p base layer formed in a surface portion of the n base layer on a side of the first main surface, an n emitter layer formed in a surface portion of the p base layer, and a p collector layer formed in a surface portion of the semiconductor layer on a side of the second main surface. On a first main surface of the semiconductor layer, a gate electrode and an emitter electrode are formed. On a second main surface of the semiconductor layer, a collector electrode is formed. A pitch of the plurality of IGBT cells is 1/40 or more and 1/20 or less of a distance between the p base layer and the p collector layer.