The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Sep. 12, 2019
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Ryota Fujitsuka, Yokkaichi, JP;

Kenta Yamada, Yokohama, JP;

Takanori Yamanaka, Yokkaichi, JP;

Takayuki Okada, Kuwana, JP;

Hirokazu Ishigaki, Yokkaichi, JP;

Hiroki Kishi, Yokkaichi, JP;

Nobushi Matsuura, Yokkaichi, JP;

Takashi Yamane, Yokkaichi, JP;

Ryota Suzuki, Yokkaichi, JP;

Assignee:

KIOXIA CORPORATION, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11563 (2017.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11563 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/76834 (2013.01); H01L 29/40117 (2019.08); H01L 29/42348 (2013.01); H01L 29/42364 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.


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