The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
May. 11, 2020
Nanya Technology Corporation, New Taipei, TW;
Tzu-Ching Tsai, Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure provides a semiconductor device structure with an air gap structure and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive contact and a second conductive contact disposed over a semiconductor substrate. The semiconductor device structure also includes a first dielectric layer surrounding the first conductive contact and the second conductive contact, and a second dielectric layer disposed over the first conductive contact, the second conductive contact and the first dielectric layer. The first dielectric layer is separated from the semiconductor substrate by a first air gap structure, the first dielectric layer is separated from the second dielectric layer by a second air gap structure, and the air gap structures reduce capacitive coupling between conductive features.