The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
May. 07, 2020
Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;
Yiqi Gong, Shanghai, CN;
Shanghai Huali Integrated Circuit Mfg. Co. Ltd, Shanghai, CN;
Abstract
The disclosure provides an ultra-low K dielectric layer and a manufacturing method thereof, the manufacturing method comprising: forming an ultra-low K dielectric layer on a substrate; forming a thin oxygen layer on the upper surface of the ultra-low K dielectric layer; performing plasma purge on the ultra-low K dielectric layer after forming the thin oxygen layer using oxygen; and the plasma purge lasts for more than 2 seconds. The ultra-low K dielectric layer manufactured according to the manufacturing method provided by the disclosure has a smooth surface, overcomes the original bump defects of the ultra-low K dielectric layer, and improves the performance of the ultra-low K dielectric layer. The manufacturing method of the ultra-low K dielectric layer provided by the disclosure has a simple process, is compatible with the manufacturing process of the existing ultra-low K dielectric layer, and has operability.