The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Jan. 30, 2018
Applicant:

The Governing Council of the University of Toronto, Toronto, CA;

Inventors:

Hairen Tan, Toronto, CA;

Xinzheng Lan, Chicago, IL (US);

Zhenyu Yang, Toronto, CA;

Sjoerd Hoogland, Toronto, CA;

Edward Sargent, Toronto, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01G 9/00 (2006.01); H01L 51/44 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2018 (2013.01); H01G 9/0029 (2013.01); H01G 9/2072 (2013.01); H01G 9/2077 (2013.01); H01G 9/2095 (2013.01); H01L 51/0003 (2013.01); H01L 51/0007 (2013.01); H01L 51/4226 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H01L 51/448 (2013.01); H01L 27/302 (2013.01); H01L 51/0077 (2013.01); H01L 51/0097 (2013.01); Y02E 10/549 (2013.01);
Abstract

Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.


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