The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Dec. 07, 2017
Applicant:

Nippon Light Metal Company, Ltd., Tokyo, JP;

Inventors:

Yuta Shimizu, Shizuoka, JP;

Shuhei Enoki, Shizuoka, JP;

Masahiko Katano, Shizuoka, JP;

Toshifumi Taira, Osaka, JP;

Kazuya Fujimoto, Osaka, JP;

Shinya Sone, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/045 (2006.01); H01G 9/025 (2006.01); H01G 9/055 (2006.01);
U.S. Cl.
CPC ...
H01G 9/045 (2013.01); H01G 9/025 (2013.01); H01G 9/055 (2013.01);
Abstract

An electrode for an aluminum electrolytic capacitor and a method for producing the same are provided that enable improvement of water resistance of a chemical formation film having a withstand voltage of 400 V or higher. The electrode for an aluminum electrolytic capacitor is produced by performing a hydration step of bringing the aluminum electrode into contact with a hydration treatment liquid having a temperature of 78° C. to 92° C. to form a hydrated film on the aluminum electrode and a chemical formation step of performing chemical formation at a chemical formation voltage of 400 V or higher in a chemical formation solution having a temperature of 58° C. to 78° C. to form the chemical formation film on the aluminum electrode. In this method, the amount of the hydrated film is made appropriate. In this electrode for an aluminum electrolytic capacitor, the number of voids that are exposed on a cut surface when the chemical formation film is cut is 150 voids/μmor smaller, and thus the water resistance thereof is high.


Find Patent Forward Citations

Loading…