The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Oct. 14, 2020
Applicant:
Dell Products L.p., Round Rock, TX (US);
Inventors:
Chai Im Teoh, Singapore, SG;
Lip Vui Kan, Hillbrooks, SG;
Assignee:
Dell Products L.P., Round Rock, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01);
Abstract
Systems and methods that may be implemented for that may be implemented to compensate for NAND flash memory voltage threshold (Vth) shift by using one or more designated calibration wordlines that are programmed into the NAND flash memory with a pre-defined data pattern. In one example configuration, the disclosed systems and methods may be automatically implemented by a SSD controller when needed to compensate for flash memory voltage threshold (Vth) shift that occurs, e.g., due to NAND memory cell charge loss due to power-off data retention over an extended period of time.