The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Nov. 16, 2020
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Liang Li, Shanghai, CN;

Xiaohua Liu, Shanghai, CN;

Qianqian Yu, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Apparatuses and techniques for detecting short circuits in a memory device, and in particular, word line-to-channel short circuits and short circuits between bit line contacts at the top of NAND strings. A short circuit detection operation includes a channel pre-clean phase which discharges a channel of a non-short circuited NAND string while boosting a bit line of a short circuited NAND string, followed by a bit line pre-charge phase which boosts a bit line of the non-short circuited NAND string, followed by a bit line discharge phase which discharges the bit line of the non-short circuited NAND string, followed by a sensing phase which identifies the short circuited NAND strings as being in a programmed or non-conductive state.


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