The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Jul. 30, 2020
SK Hynix Inc., Icheon-si, KR;
Sung Wook Jung, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A semiconductor memory device includes a cell string with a plurality of selection transistors, a plurality of dummy transistors and a plurality of memory cell transistors coupled in series therein and a pass transistor (TR) unit with a plurality of pass transistors that transmit a plurality of driving signals to the cell string. The pass TR unit includes a plurality of first pass transistors transmitting a first driving signal with a first level voltage, among the plurality of driving signals, to the plurality of selection transistors, respectively, and a plurality of second pass transistors transmitting a second driving signal with a second level voltage that is higher than the first level voltage, among the plurality of driving signals, to a plurality of dummy transistors, respectively. Each of the second pass transistors has a larger channel area than each of the first pass transistors.