The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Dec. 29, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Ting-Cih Kang, New Taipei, TW;

Wei-Zhong Li, Taoyuan, TW;

Hsih-Yang Chiu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 27/08 (2006.01); G01R 31/30 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2896 (2013.01); G01R 27/08 (2013.01); G01R 31/2874 (2013.01); G01R 31/2879 (2013.01); G01R 31/3004 (2013.01);
Abstract

The present application discloses a method for characterizing a resistance state of a programmable element of an integrated circuit. The method includes the steps of setting a first programming voltage of a first polarity to program the programmable element of the integrated circuit, setting a first read voltage of the first polarity to the integrated circuit at a first temperature to obtain a first read current, and a first resistance is derived from the first read current, setting the first read voltage of the first polarity to the integrated circuit at a second temperature to obtain a second read current, the second temperature is at least 50° C. higher than the first temperature, and a second resistance is derived from the second read current, and comparing the first resistance and the second resistance to characterize the resistance state of the programmable element.


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