The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Mar. 25, 2020
Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;
Ping-Hsun Su, Shanghai, CN;
Shanghai Huali Integrated Circuit Mfg. Co. Ltd., Shanghai, CN;
Abstract
The present disclosure provides an analysis method for a semiconductor device for analyzing a plurality of process parameters for manufacturing a HKMG fin field effect transistor. The analysis method specifically includes: establishing a plurality of process parameter models by grouping the plurality of process parameters in pairs; performing sensitivity analysis on each of the process parameter models; extracting a plurality of key process parameter models from the plurality of process parameter models based on the results of the sensitivity analysis; and performing data mining on the plurality of key process parameter models to determine a plurality of key process parameters and their correlations among the plurality of key process parameters. According to the analysis method provided by the present disclosure, related process parameters are highlighted by data mining and grouping, and the source of process parameter changes is explained. It is possible to adjust the process.