The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Apr. 12, 2021
Applicant:

Xidian University, Xi'an, CN;

Inventors:

Xiaolong Chen, Xi'an, CN;

Jia Sun, Xi'an, CN;

Kai Yang, Xi'an, CN;

Zhimin Liu, Xi'an, CN;

Assignee:

Xidian University, Xi'an, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01Q 60/22 (2010.01); G01Q 30/04 (2010.01);
U.S. Cl.
CPC ...
G01Q 60/22 (2013.01); G01Q 30/04 (2013.01);
Abstract

The present disclosure relates to the technical field of microwave test, and discloses a method and a system for analyzing the spatial resolution of a microwave near-field probe and a microwave microscope equipped with the system, wherein in the method for analyzing the spatial resolution of the microwave near-field probe, a three-dimensional equipotential surface in a sample is drawn by using an electric field formula calculated by a quasi-static theory; an equivalent model of a probe sample is established by using finite element analysis software, so as to change material characteristics in the area outside the three-dimensional equipotential surface; by observing the influence of changing materials on the potential distribution in the sample, a near-field action range of the probe is determined, and the spatial resolution of the microwave near-field scanning microscope is analyzed and calculated.


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