The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Nov. 12, 2019
Showa Denko K.k., Tokyo, JP;
Yohei Fujikawa, Hikone, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucibleis able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portionA and a crucible upper portionB, the crucible lower portion including a bottom portionAa and a side portionAb, and the crucible upper portion including a top portionBa provided with a seed crystal installation portionBc for installing a seed crystal SD and a side portionBb. A male threadAAa is provided at an outer circumferenceAA of the side portionAb of the crucible lower portionA, a female threadBBa engaging with the male thread is provided at an inner circumferenceBB of the side portionBb of the crucible upper portionB, and the crucible includes a rotation mechanismthat is configured to relatively move the crucible upper portionB and the crucible lower portionA in a vertical direction by rotating at least one of the crucible upper portionB and the crucible lower portionA.