The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Mar. 25, 2019
Hangzhou Silan Integrated Circuit Co., Ltd., Hangzhou, CN;
Hangzhou Silan Microelectronics Co., Ltd., Hangzhou, CN;
Wei Sun, Hangzhou, CN;
Yongxiang Wen, Hangzhou, CN;
Chen Liu, Hangzhou, CN;
Junshan Ge, Hangzhou, CN;
Zhijian Ma, Hangzhou, CN;
HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD., Hangzhou, CN;
HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou, CN;
Abstract
A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.