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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11302880 B1

PDFFull Text
Date of Patent:
Apr. 12, 2022

Filed:

Feb. 22, 2019

Organic thin-film transistors and methods for manufacturing the same and image display devices

Applicant:

Toppan Printing Co., Ltd., Taito-ku, JP;

Inventors:

Noriaki Ikeda, Taito-ku, JP;

Makoto Nishizawa, Taito-ku, JP;

Assignee:

TOPPAN PRINTING CO., LTD., Taito-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Raj R Gupta

Int. Cl.
CPC ...
H01L 29/786 (2006.01); G09F 9/30 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 27/32 (2006.01); H01L 51/10 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); G09F 9/30 (2013.01); H01L 21/28 (2013.01); H01L 27/3265 (2013.01); H01L 27/3274 (2013.01); H01L 29/417 (2013.01); H01L 29/423 (2013.01); H01L 29/49 (2013.01); H01L 29/786 (2013.01); H01L 51/0529 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01);
Abstract

An organic thin-film transistor includes an insulating substrate, a capacitor electrode formed on the insulating substrate, a first insulating layer covering the capacitor electrode, a gate electrode formed on the first insulating layer, a second insulating layer covering the gate electrode and the capacitor electrode, a source electrode formed on the second insulating layer, a drain electrode formed on the second insulating layer, and a semiconductor layer formed on the second insulating layer in a portion between the source electrode and the drain electrode and including an organic semiconductor material.

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