The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Apr. 16, 2020
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Youqing Tang, Shanghai, CN;
Zhigang Zhang, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
A method for making an RRAM resistive structure includes, step 1, forming a via structure, which includes depositing an ultra-low dielectric constant material layer on a substrate, depositing a copper layer on the ultra-low dielectric constant material layer, depositing a carbon-containing silicon nitride layer, and patterning a via in the carbon-containing silicon nitride layer. step 2, filling the via structure with a TaN layer, followed by planarizing a surface of the via structure without dishing; step 3, forming a first TiN layer on the TaN-filled via structure; and step 4, forming an RRAM resistive structure stack having layers of TaOx, TaO, Ta, and a second TiN from bottom to top on the first TiN layer, and step 5, patterning the RRAM resistive structure stack the first TiN layer over the TaN-filled via structure to form the RRAM resistive structure.