The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 01, 2015
Applicant:

Hitachi Automotive Systems, Ltd., Ibaraki, JP;

Inventors:

Hiroshi Nakano, Tokyo, JP;

Masahiro Matsumoto, Tokyo, JP;

Yoshimitsu Yanagawa, Tokyo, JP;

Yasuo Onose, Hitachinaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 35/14 (2006.01); G01F 1/684 (2006.01); G01F 15/02 (2006.01); G01F 1/692 (2006.01); G01F 15/00 (2006.01); G01F 1/698 (2006.01); H01L 35/02 (2006.01);
U.S. Cl.
CPC ...
H01L 35/14 (2013.01); G01F 1/6845 (2013.01); G01F 1/692 (2013.01); G01F 1/698 (2013.01); G01F 15/006 (2013.01); G01F 15/022 (2013.01); H01L 35/02 (2013.01);
Abstract

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.


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