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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11302842 B1

PDFFull Text
Date of Patent:
Apr. 12, 2022

Filed:

Jun. 09, 2020

Micro light emitting diode device and manufacturing method thereof

Applicant:

Playnitride Inc., Hsinchu County, TW;

Inventors:

Yu-Yun Lo, Hsinchu County, TW;

Chih-Ling Wu, Hsinchu County, TW;

Yi-Min Su, Hsinchu County, TW;

Yen-Yeh Chen, Hsinchu County, TW;

Yi-Chun Shih, Hsinchu County, TW;

Assignee:

PlayNitride Inc., Hsinchu County, TW;

Attorney:

JCIPRNET

Primary Examiner:

Selim U Ahmed

Assistant Examiner:

Evan G Clinton

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/36 (2010.01); H01L 25/16 (2006.01); H01L 33/58 (2010.01); H01L 33/20 (2010.01); H01L 33/52 (2010.01); H01L 27/15 (2006.01); H01L 21/78 (2006.01); H01L 25/075 (2006.01); H01L 33/12 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 21/7806 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/44 (2013.01); H01L 33/52 (2013.01); H01L 33/58 (2013.01); H01L 27/156 (2013.01);
Abstract

A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

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