The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Dec. 11, 2019
Applicant:
Analog Devices, Inc., Norwood, MA (US);
Inventor:
Mohamed Azize, Medford, MA (US);
Assignee:
Analog Devices, Inc., Norwood, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/112 (2006.01); H01L 31/18 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03048 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/035272 (2013.01); H01L 31/109 (2013.01); H01L 31/1123 (2013.01); H01L 31/1848 (2013.01);
Abstract
Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.