The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Oct. 29, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11568 (2017.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 27/0924 (2013.01); H01L 27/11568 (2013.01); H01L 29/7851 (2013.01); H01L 29/7855 (2013.01);
Abstract
A semiconductor device includes a memory cell which is configured of a FinFET having a split-gate type MONOS structure, the FinFET has a plurality of source regions formed in a plurality of fins, and the plurality of source regions are commonly connected by a source line contact. Further, the FinFET has a plurality of drain regions formed in the plurality of fins, the plurality of drain regions are commonly connected by a bit line contact, and the FinFET constitutes a memory cell of 1 bit.