The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Jan. 23, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Te-Yin Chen, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORP., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 29/42328 (2013.01); H01L 29/4983 (2013.01); H01L 29/512 (2013.01); H01L 29/66825 (2013.01); H01L 27/092 (2013.01);
Abstract
The present application discloses a semiconductor device with an oxidized intervention layer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a tunneling insulating layer disposed over the substrate, a floating gate disposed over the tunnel oxide layer, a lateral oxidized intervention layer disposed over the floating gate, and a control gate disposed over the dielectric layer. The lateral oxidized intervention layer comprises a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion.