The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
May. 30, 2019
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Fengjuan Liu, Beijing, CN;
Donghui Yu, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 27/3244 (2013.01); H01L 29/66553 (2013.01); H01L 29/78675 (2013.01); H01L 51/56 (2013.01);
Abstract
A thin film transistor and a fabrication method thereof, an array substrate and a fabrication method thereof are disclosed. The thin film transistor includes: a base substrate; a gate electrode, an active layer, a source electrode and a drain electrode on the base substrate; and the thin film transistor further includes: a light-shielding portion between the active layer and the base substrate, the light-shielding portion includes a groove, and the active layer is in the groove.