The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Jan. 23, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Hung-Chi Tsai, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORP., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/41791 (2013.01); H01L 29/4991 (2013.01); H01L 29/6681 (2013.01);
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, two conductive features positioned apart from each other over the substrate, and a porous middle layer positioned between the two conductive features and adjacent to the two conductive features. A porosity of the porous middle layer is between about 25% and about 100%.