The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jan. 27, 2020
Applicant:

Hrl Laboratories, Llc, Malibu, CA (US);

Inventors:

Joel C. Wong, Simi Valley, CA (US);

Jeong-Sun Moon, Malibu, CA (US);

Robert M. Grabar, Malibu, CA (US);

Michael T. Antcliffe, Malibu, CA (US);

Assignee:

HRL Laboratories LLC, Malibu, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/41 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/765 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 21/28587 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/765 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/413 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer, and forming a tri-layer gate having a gate foot in the first opening, a gate neck extending from the gate foot, and a gate head extending from the gate neck. The gate foot has a first width, and the gate neck has a second width that is wider than the first width. The gate neck extends for a length over the dielectric passivation layer on both sides of the first opening. The gate head has a third width wider than the second width of the gate neck.


Find Patent Forward Citations

Loading…