The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Oct. 09, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ye Lu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Haitao Cheng, San Jose, CA (US);
Chao Song, San Diego, CA (US);
Assignee:
Qualcomm Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 28/65 (2013.01); H01L 23/53209 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01);
Abstract
A low cost capacitor (e.g., metal-insulator-metal (MIM) capacitor) is included in the back-end-of-line layers for effective routing and area savings. The capacitor has a first electrode (e.g., a first terminal of the capacitor) including a conductive back-end-of-line (BEOL) layer and a second electrode (e.g., a second terminal of the capacitor) including a nitride-based metal. The capacitor also has an etch stop layer (e.g., a dielectric of the capacitor) between the first electrode and the second electrode.