The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyungsang Cho, Gwacheon-si, KR;

Chanwook Baik, Yongin-si, KR;

Hojung Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0384 (2006.01); H01L 31/112 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14679 (2013.01); H01L 31/03845 (2013.01); H01L 31/035218 (2013.01); H01L 31/1129 (2013.01);
Abstract

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.


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