The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Mar. 25, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoonyoung Choi, Seoul, KR;
Sungsoo Yim, Seoul, KR;
Byeongmoo Kang, Busan, KR;
Seongmo Koo, Seoul, KR;
Sejin Park, Hwaseong-si, KR;
Jinwoo Bae, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.