The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Feb. 24, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hiroyuki Kutsukake, Yokkaichi Mie, JP;

Masayuki Akou, Yokohama Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0928 (2013.01); H01L 29/41725 (2013.01);
Abstract

A semiconductor device includes: two first semiconductor regions of a first conductivity type spaced apart from each other; a second semiconductor region of a second conductivity type provided between the two first semiconductor regions; a first insulator region surrounding the two first semiconductor regions and the second semiconductor region; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the second conductivity type, the fourth semiconductor region surrounding the third semiconductor region and the first insulator region and having an impurity concentration of the second conductivity type lower than an impurity concentration of the third semiconductor region; a second insulator region that surrounds the fourth semiconductor region; a conductor layer provided over the second semiconductor region; two first contact plugs; a second contact plug provided on the conductor layer; and a third contact plug provided on the third semiconductor region.


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