The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Nov. 18, 2019
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Yi-Hao Chen, Taichung, TW;
Tsu-Yi Wu, Tainan, TW;
Chih-Hsun Lu, Dongshan Township, Yilan County, TW;
Po-An Chen, Toufen, TW;
Chun-Chieh Liu, Jhubei, TW;
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Abstract
A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.