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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11302659 B1

PDFFull Text
Date of Patent:
Apr. 12, 2022

Filed:

Sep. 30, 2020

Semiconductor device

Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventors:

Hisanori Namie, Kyoto, JP;

Satoshi Goto, Kyoto, JP;

Satoshi Tanaka, Kyoto, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Kyoto, JP;

Attorney:

Pearne & Gordon LLP

Primary Examiner:

Henry Choe

Int. Cl.
CPC ...
H03F 3/191 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H03F 3/195 (2006.01); H03F 1/56 (2006.01); H03F 3/213 (2006.01); H01L 27/06 (2006.01); H01L 29/735 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 27/0647 (2013.01); H01L 29/735 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H01L 29/73 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/1415 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/451 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/13051 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/30111 (2013.01); H03F 2200/267 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

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Namie, Hisanori. (2022). Semiconductor device (U.S. Patent No. 11302659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11302659

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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