The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Apr. 08, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Theodorus E. Standaert, Clifton Park, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76847 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01); H01L 43/12 (2013.01);
Abstract

A via structure and methods for forming a via structure generally includes a via opening in a dielectric layer. A conformal barrier layer is in the via opening; and a conductive metal on the barrier layer in the via opening. The conductive metal includes a recessed top surface. A conductive planarization stop layer is on the recessed top surface and extends about a shoulder portion formed in the dielectric layer, wherein the shoulder portion extends about a perimeter of the via opening. A fill material including an insulator material or a conductor material is on the conductive planarization stop layer within the recessed top surface, wherein the conductive planarization stop layer on the shoulder portion is coplanar to the insulator material or the conductor material. Also described are methods of fabricating the via structure.


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