The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Apr. 21, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xue Pitner, San Jose, CA (US);

Deepanshu Dutta, San Jose, CA (US);

Huai-Yuan Tseng, San Jose, CA (US);

Ravi Kumar, Redwood City, CA (US);

Cynthia Hsu, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3481 (2013.01); G11C 16/08 (2013.01); G11C 16/107 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

A storage device is disclosed herein. The storage device comprises a block including a plurality of memory cells and a circuit coupled to the plurality of memory cells of the block. The circuit is configured to program memory cells of a plurality of strings of a word line of the block and verify, for a plurality of sets of the memory cells, a data state of a set of the memory cells, where each set of the plurality of sets of the memory cells includes a memory cell from each string of the plurality of strings of the word line. Further, the circuit is configured to determine a number of sets of the plurality of memory cell sets that are verified to be in a first data state and determine, based on the number of sets, whether the block is faulty.


Find Patent Forward Citations

Pitner, Xue. (2022). Programming techniques including an all string verify mode for single-level cells of a memory device (U.S. Patent No. 11302409). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11302409

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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