The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Dec. 22, 2020
Applicant:

Coventor, Inc., Cary, NC (US);

Inventors:

Qing Peng Wang, Shanghai, CN;

Shi-Hao Huang, Kaohsiung, TW;

Yu De Chen, Tainan, TW;

Rui Bao, Shanghai, CN;

Joseph Ervin, San Jose, CA (US);

Assignee:

Coventor, Inc., Cary, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); G06F 30/398 (2020.01); G06F 30/392 (2020.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); G06F 111/10 (2020.01); G06F 111/16 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 30/392 (2020.01); H01L 21/02233 (2013.01); H01L 21/31105 (2013.01); G06F 2111/10 (2020.01); G06F 2111/16 (2020.01);
Abstract

Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.


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