The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 27, 2017
Applicant:

United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);

Inventors:

Sang H. Choi, Poquoson, VA (US);

Adam J. Duzik, Yorktown, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); H01L 21/02 (2006.01); C30B 29/52 (2006.01); C30B 29/20 (2006.01); C30B 23/02 (2006.01); C30B 25/06 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/48 (2006.01);
U.S. Cl.
CPC ...
C30B 23/063 (2013.01); C30B 23/025 (2013.01); C30B 25/06 (2013.01); C30B 25/186 (2013.01); C30B 29/20 (2013.01); C30B 29/52 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02562 (2013.01); H01L 21/02609 (2013.01); C30B 29/406 (2013.01); C30B 29/48 (2013.01);
Abstract

Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature.


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