The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Jun. 28, 2017
Applicant:
Jfe Mineral Company, Ltd., Tokyo, JP;
Inventor:
Kazuhiko Echizenya, Tokyo, JP;
Assignee:
JFE MINERAL COMPANY, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/04 (2006.01); C30B 11/02 (2006.01); C30B 29/32 (2006.01); C30B 11/00 (2006.01);
U.S. Cl.
CPC ...
C30B 11/02 (2013.01); C30B 11/00 (2013.01); C30B 29/32 (2013.01);
Abstract
Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.