The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Oct. 05, 2020
Applicant:
Raytheon Technologies Corporation, Farmington, CT (US);
Inventors:
Zhongfen (Vivian) Ding, South Windsor, CT (US);
Georgios S. Zafiris, Glastonbury, CT (US);
Mark R. Jaworowski, Sarasota, FL (US);
Assignee:
Raytheon Technologies Corporation, Farmington, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 11/12 (2006.01); C25D 11/06 (2006.01); C25D 11/02 (2006.01); C25D 11/08 (2006.01); C25D 11/10 (2006.01); C25D 11/24 (2006.01);
U.S. Cl.
CPC ...
C25D 11/12 (2013.01); C25D 11/024 (2013.01); C25D 11/06 (2013.01); C25D 11/08 (2013.01); C25D 11/10 (2013.01); C25D 11/246 (2013.01);
Abstract
A method of growing a hierarchically structured anodized film to an aluminum substrate including growing a Phosphoric Acid Anodizing (PAA) film layer to an aluminum substrate and growing a multiple of Tartaric-Sulfuric Acid Anodizing (TSA) film layers under the Phosphoric Acid Anodizing (PAA) film layer.