The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Aug. 28, 2019
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Yuji Takebayashi, Toyama, JP;

Kosuke Takagi, Toyama, JP;

Atsushi Hirano, Toyama, JP;

Ryuichi Nakagawa, Toyama, JP;

Noriyuki Isobe, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4402 (2013.01); C23C 16/403 (2013.01); C23C 16/4408 (2013.01); C23C 16/45597 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01);
Abstract

Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.


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