The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Dec. 29, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
An electrostatic discharge protection (ESD) circuit is provided for a semiconductor element. The semiconductor element includes first and second drain/source electrodes and is surrounded by a deep well region. The ESD circuit includes a first control circuit and a first discharge circuit. The first control circuit is electrically connected between the first drain/source electrode and a power terminal and includes a first control terminal electrically connected to the deep well region and generates a first control signal. The first discharge circuit is controlled by the first control signal. When an electrostatic discharge event occurs on the first drain/source electrode, the first control circuit generates the first control signal according to potential states of the deep well region and the first drain/source electrode, and the first discharge circuit provides a first discharge path between the first drain/source electrode and the power terminal according to the first control signal.