The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Mar. 26, 2020
Applicant:

Newport Fab, Llc, Newport Beach, CA (US);

Inventors:

Edward Preisler, San Clemente, CA (US);

Farnood Rezaie, Irvine, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/06 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/132 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0612 (2013.01); H01S 5/021 (2013.01); H01S 5/0203 (2013.01); H01S 5/0218 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12135 (2013.01);
Abstract

A semiconductor structure includes a group III-V chiplet over a group IV substrate. A group IV optoelectronic device is situated in the group IV substrate. A patterned group III-V optoelectronic device is situated in the group III-V chiplet. A heating element is near the group IV optoelectronic device, or alternatively, near the patterned group III-V optoelectronic device. A dielectric layer is over the patterned group III-V optoelectronic device. A venting hole is in the dielectric layer in proximity of the heating element. A cavity is in the group IV substrate in proximity to the heating element.


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