The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Nov. 19, 2019
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Inventors:
Jea Gun Park, Seongnam-si, KR;
Jong Ung Baek, Seongnam-si, KR;
Kei Ashiba, Seoul, KR;
Jin Young Choi, Seoul, KR;
Mi Ri Park, Incheon, KR;
Hyun Gyu Lee, Seoul, KR;
Han Sol Jun, Seoul, KR;
Sun Hwa Jung, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/15 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/15 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01);
Abstract
Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.