The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

May. 26, 2020
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Wen-Yu Lin, Xiamen, CN;

Meng-Hsin Yeh, Xiamen, CN;

Yun-Ming Lo, Xiamen, CN;

Chien-Yao Tseng, Xiamen, CN;

Chung-Ying Chang, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/28 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/285 (2013.01); H01L 25/0756 (2013.01);
Abstract

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg, Eg, and Egwhich satisfy a relationship of Eg<Eg<Eg. In addition, Egis greater than an energy band gap of the P-type electron-blocking layer.


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