The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jul. 09, 2020
Applicant:
Db Hitek Co., Ltd., Seoul, KR;
Inventor:
Joo-Hyung Kim, Seoul, KR;
Assignee:
DB HiTek Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 21/765 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/765 (2013.01); H01L 21/76202 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01);
Abstract
A lateral double diffused metal oxide semiconductor (LDMOS) transistor and a semiconductor can reduce the size of the entire power block and can decrease costs by preventing formation of an edge termination region between adjacent device tips or ends along a width direction when the corresponding LDMOS transistor cell has a limited width and the LDMOS transistor is a multi-finger LDMOS transistor.
Kim, Joo-Hyung. (2022). Lateral double diffused metal oxide semiconductor and method of fabricating same (U.S. Patent No. 11296222). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11296222
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile