The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jan. 16, 2019
Rohm Co., Ltd., Kyoto, JP;
Taketoshi Tanaka, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor deviceincludes a first nitride semiconductor layer, constituting an electron transit layer, a second nitride semiconductor layer, formed on the first nitride semiconductor layerand constituting an electron supply layer, a nitride semiconductor gate layer, disposed on the second nitride semiconductor layerand containing an acceptor type impurity, a metal film, formed on the nitride semiconductor gate layer, and a gate pad, connected to the metal filmvia a gate insulating filmhaving a first surface and a second surface, the first surface of the gate insulating filmis electrically connected directly or via a metal to the metal film, and the second surface of the gate insulating filmis electrically connected directly or via a metal to the gate pad