The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Oct. 23, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Takeshi Tawara, Tsukuba, JP;
Mina Ohse, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a fourth semiconductor layer of a second conductivity type provided on the third semiconductor layer. A first electrode is provided on the first semiconductor layer, and a second electrode is provided on the fourth semiconductor layer. An impurity concentration of the second semiconductor layer is higher than that of the first semiconductor layer, and an impurity concentration of the third semiconductor layer is lower than that of the second semiconductor layer. The first semiconductor layer also contains, at a surface thereof in contact with the second semiconductor layer, a second impurity different from a first impurity that determines a conductivity type of the first semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile