The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Jan. 02, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Toru Takayama, Kanagawa, JP;

Junya Maruyama, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); B32B 7/06 (2019.01); B32B 43/00 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 51/00 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); H01L 51/56 (2006.01); H01L 21/322 (2006.01); H01L 51/52 (2006.01); G02F 1/136 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1266 (2013.01); B32B 7/06 (2013.01); B32B 43/006 (2013.01); G02F 1/1368 (2013.01); H01L 21/76251 (2013.01); H01L 27/1214 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 29/6675 (2013.01); H01L 29/66757 (2013.01); H01L 29/78663 (2013.01); H01L 51/003 (2013.01); H01L 51/0097 (2013.01); H01L 51/56 (2013.01); B32B 2310/0843 (2013.01); B32B 2457/08 (2013.01); B32B 2457/14 (2013.01); G02F 1/13613 (2021.01); H01L 21/3221 (2013.01); H01L 27/3244 (2013.01); H01L 51/529 (2013.01); H01L 51/5237 (2013.01); H01L 51/5246 (2013.01); H01L 2227/323 (2013.01); H01L 2227/326 (2013.01); H01L 2251/5338 (2013.01); Y10S 438/977 (2013.01); Y10T 156/1137 (2015.01); Y10T 156/1939 (2015.01);
Abstract

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer () and a second material layer () (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer () or an interface thereof.


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