The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Dec. 24, 2019
Gachon University of Industry-academic Cooperation Foundation;
Seongjae Cho, Seoul, KR;
Gachon Univ. of Industry-Academic Co-op Foundation, Seongnam-si, KR;
Abstract
A feedback 1T DRAM device that has a partial insulating film structure is provided. A body region may be divided into two or more in a channel direction by pn junctions and/or partial insulating layers, and gates may be formed on each of the divided body regions. The present invention can be operated by filling and subtracting electrons in the energy well of the conduction band and holes in the energy well of the valence band, respectively. In addition, it is possible to maximize retention time and improve operation reliability by reducing carrier loss by energy barriers of pn junctions and/or partial insulating layers.