The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jun. 05, 2018
Fraunhofer-gesellschaft, Munich, DE;
Bayerische Motoren Werke Aktiengesellschaft, Munich, DE;
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;
Rene Richter, Munich, DE;
Thomas Schimanek, Wörthsee, DE;
Maximillian Hofmann, Erlangen, DE;
Florian Hilpert, Erlangen, DE;
Andreas Schletz, Erlangen, DE;
Christoph Bayer, Erlangen, DE;
Uwe Waltrich, Erlangen, DE;
Fraunhofer-Gesellschaft, Munich, DE;
Bayerische Motoren Werke Aktiengesellschaft, Munich, DE;
Abstract
A power semiconductor module, as well as a corresponding method of manufacture, are provided. The power semiconductor module has a plurality of power switches. A first subset of the power switches forms part of a first electrical current branch. A second subset of the power switches forms part of a second electrical current branch. Within the current branches, the associated power switches are arranged symmetrically with respect to the DC voltage contacts and are connected in such a way that a current density which is formed in the individual current paths which are respectively assigned to one of the power switches is at least substantially homogeneously distributed during the high frequency operation of the power semiconductor module and/or in the operation of the power switches with high voltage gradients.