The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Sep. 29, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Joachim Mahler, Regensburg, DE;

Giovanni Ragasa Garbin, Malacca, MY;

Chen Wen Lee, Ipoh Perak, MY;

Benjamin Reichert, Lappersdorf, DE;

Peter Strobel, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 24/01 (2013.01); H01L 2224/01 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/29015 (2013.01); H01L 2224/32013 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83815 (2013.01);
Abstract

A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.


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