The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Dec. 23, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Min Gyu Kim, Hwaseong-si, KR;
Sa Hwan Hong, Yongin-si, KR;
Abstract
Vertical field-effect transistor (VFET) devices and methods of forming the VFET devices are provided. The methods may include forming a first channel region and a second channel region on a substrate, forming a recess in the substrate between the first and second channel regions by removing a portion of the liner and a portion of the substrate, forming a bottom source/drain region in the recess of the substrate, forming a capping layer on the bottom source/drain region, removing the liner and the capping layer, forming a spacer on the substrate and the bottom source/drain region, and forming a gate structure on side surfaces of the first and second channel regions.